The Journal of General Physiology
Keystone Symposia
  Home | Help | Feedback | Subscriptions | Archive | Search | Table of Contents

Published online 15 November 2004 doi:10.1085/jgp.200409119
The Rockefeller University Press, 0022-1295 $8.00
JGP, Volume 124, Number 6, 703-718
This Article
Right arrow Full Text
Right arrow PDF (Full Text)
Right arrow PPT slides of all figures
Right arrow Alert me when this article is cited
Right arrow Citation Map
Services
Right arrow Email this article
Right arrow Similar articles in this journal
Right arrow Similar articles in PubMed
Right arrow Alert me to new content in the JGP
Right arrow Download to citation manager
Citing Articles
Right arrow Citing Articles via HighWire
Right arrow Citing Articles via CrossRef
Right arrow Citing Articles via Google Scholar
Google Scholar
Right arrow Articles by Zhang, M.
Right arrow Articles by Tseng, G.-N.
Right arrow Search for Related Content
PubMed
Right arrow PubMed Citation
Right arrow Articles by Zhang, M.
Right arrow Articles by Tseng, G.-N.
Social Bookmarking
 Add to CiteULike   Add to Complore   Add to Connotea   Add to Del.icio.us   Add to Digg   Add to Reddit   Add to Technorati  
What's this?
Gating Charges in the Activation and Inactivation Processes of the hERG Channel

Mei Zhang, Jie Liu, and Gea-Ny Tseng

Department of Physiology, Virginia Commonwealth University, Richmond, VA 23298

Address correspondence to Gea-Ny Tseng, Dept. of Physiology, Virginia Commonwealth University, 1101 E. Marshall St., Richmond, VA 23298. Fax: (804)828-7382. email: gtseng{at}hsc.vcu.edu

The hERG channel has a relatively slow activation process but an extremely fast and voltage-sensitive inactivation process. Direct measurement of hERG's gating current (Piper, D.R., A. Varghese, M.C. Sanguinetti, and M. Tristani-Firouzi. 2003. PNAS. 100:10534–10539) reveals two kinetic components of gating charge transfer that may originate from two channel domains. This study is designed to address three questions: (1) which of the six positive charges in hERG's major voltage sensor, S4, are responsible for gating charge transfer during activation, (2) whether a negative charge in the cytoplasmic half of S2 (D466) also contributes to gating charge transfer, and (3) whether S4 serves as the sole voltage sensor for hERG inactivation. We individually mutate S4's positive charges and D466 to cysteine, and examine (a) effects of mutations on the number of equivalent gating charges transferred during activation (za) and inactivation (zi), and (b) sidedness and state dependence of accessibility of introduced cysteine side chains to a membrane-impermeable thiol-modifying reagent (MTSET). Neutralizing the outer three positive charges in S4 and D466 in S2 reduces za, and cysteine side chains introduced into these positions experience state-dependent changes in MTSET accessibility. On the other hand, neutralizing the inner three positive charges in S4 does not affect za. None of the charge mutations affect zi. We propose that the scheme of gating charge transfer during hERG's activation process is similar to that described for the Shaker channel, although hERG has less gating charge in its S4 than in Shaker. Furthermore, channel domain other than S4 contributes to gating charge involved in hERG's inactivation process.

Key Words: voltage-gated K+ channel • ion channel gating • mutagenesis • Xenopus oocyte • voltage sensor


J. Liu's current address is Department of Pathophysiology, First Military Medical University, People's Republic of China.

Abbreviation used in this paper: WT, wild type.


Add to CiteULike CiteULike   Add to Complore Complore   Add to Connotea Connotea   Add to Del.icio.us Del.icio.us   Add to Digg Digg   Add to Reddit Reddit   Add to Technorati Technorati    What's this?


This article has been cited by other articles:


Home page
Biophys. JHome page
C. Alonso-Ron, P. de la Pena, P. Miranda, P. Dominguez, and F. Barros
Thermodynamic and Kinetic Properties of Amino-Terminal and S4-S5 Loop HERG Channel Mutants under Steady-State Conditions
Biophys. J., May 15, 2008; 94(10): 3893 - 3911.
[Abstract] [Full Text] [PDF]


Home page
Am. J. Physiol. Cell Physiol.Home page
J. I. Vandenberg, A. Varghese, Y. Lu, J. A. Bursill, M. P. Mahaut-Smith, and C. L.-H. Huang
Temperature dependence of human ether-a-go-go-related gene K+ currents
Am J Physiol Cell Physiol, July 1, 2006; 291(1): C165 - C175.
[Abstract] [Full Text] [PDF]


Home page
J. Gen. Physiol.Home page
Z. Ma, X. J. Lou, and F. T. Horrigan
Role of Charged Residues in the S1-S4 Voltage Sensor of BK Channels
J. Gen. Physiol., February 27, 2006; 127(3): 309 - 328.
[Abstract] [Full Text] [PDF]


Home page
J. Physiol.Home page
R. N. Subbiah, M. Kondo, T. J. Campbell, and J. I. Vandenberg
Tryptophan scanning mutagenesis of the HERG K+ channel: the S4 domain is loosely packed and likely to be lipid exposed
J. Physiol., December 1, 2005; 569(2): 367 - 379.
[Abstract] [Full Text] [PDF]



  Home | Help | Feedback | Subscriptions | Archive | Search | Table of Contents